power transistors 1 2sb0946 2sb0946 2sb0946 2sb0946 2sb0946 (2sb946) (2sb946) (2sb946) (2sb946) (2sb946) silicon pnp epitaxial planar type for power switching complementary to 2sd1271 features ? low collector to emitter saturation voltage v ce(sat) ? satisfactory linearity of forward current transfer ratio h fe ? large collector current i c ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base voltage v cbo ? 130 v collector to emitter voltage v ceo ? 80 v emitter to base voltage v ebo ? 7v peak collector current i cp ? 15 a collector current i c ? 7a collector power t c = 25 cp c 40 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = ? 100 v, i e = 0 ? 10 a emitter cutoff current i ebo v eb = ? 5 v, i c = 0 ? 50 a collector to emitter voltage v ceo i c = ? 10 ma, i b = 0 ? 80 v forward current transfer ratio h fe1 v ce = ? 2 v, i c = ? 0.1 a 45 h fe2 * v ce = ? 2 v, i c = ? 3 a 90 260 collector to emitter saturation voltage v ce(sat) i c = ? 5 a, i b = ? 0.25 a ? 0.5 v base to emitter saturation voltage v be(sat) i c = ? 5 a, i b = ? 0.25 a ? 1.5 v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = ? 3 a, i b1 = ? 0.3 a, i b2 = 0.3 a 0.5 s storage time t stg 1.5 s fall time t f 0.1 s rank q p h fe2 90 to 180 130 to 260 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 ordering can be made by the common rank (pq rank h fe2 = 90 to 260) in the rank classification. 1 : base 2 : collector 3 : emitter eiaj : sc-67 to-220f package note) * : rank classification note.) the part number in the parenthesis shows conventional part number.
power transistors 2 2sb0946 v be(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c c ob ? i c t on , t stg , t f ? i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (4) (3) (2) ambient temperature t a ( ?c ) collector power dissipation p c ( w ) 0 10 8 2 6 4 0 10 8 6 4 2 t c =25 ? c i b = 120ma 110ma 100ma 80ma 90ma 70ma 60ma 40ma 30ma 20ma 10ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =20 25 ? c t c =100 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =20 t c = 25 ? c 25 ? c 100 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 v ce = 2v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce = 10v f=10mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 8 2 6 4 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =10 ( i b1 =i b2 ) v cc = 50v t c =25 ? c collector current i c ( a ) switching time t on ,t stg ,t f ( s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 1ms 10ms t=0.5ms i cp i c non repetitive pulse t c =25 ? c dc collector to emitter voltage v ce ( v ) collector current i c ( a )
power transistors 3 2sb0946 r th(t) ? t 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 10 2 10 1 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ? c/w )
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